• DocumentCode
    966938
  • Title

    Efficiency considerations of high-low- and low-high-low-doping GaAs IMPATT diodes

  • Author

    O´Hara, S. ; Grierson, J.R.

  • Author_Institution
    Post Office Research Department, Ipswich, UK
  • Volume
    10
  • Issue
    25
  • fYear
    1974
  • Firstpage
    541
  • Lastpage
    543
  • Abstract
    Large-signal computer simulations of high-low and low-high-low IMPATT-diode structures show that the high experimental efficiencies of such structures are not related to the avalanche-region voltage by the term (1 ¿ VAV/VDC) as predicted by simple theory. Other reasons are suggested for the high experimental efficiencies of such structures.
  • Keywords
    IMPATT diodes; electronics applications of computers; simulation; solid-state microwave devices; Fourier component; GaAs IMPATT diodes; avalanche region voltage; computer simulations; depletion region; efficiency; field profiles; large signal analysis; terminal particle current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740429
  • Filename
    4245319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966938