• DocumentCode
    967224
  • Title

    Properties of Hafnium Dioxide Thin-Film Capacitors

  • Author

    Huber, F. ; Huber, Franz

  • Author_Institution
    Bell Labs,Pa
  • Volume
    7
  • Issue
    4
  • fYear
    1971
  • fDate
    12/1/1971 12:00:00 AM
  • Firstpage
    141
  • Lastpage
    147
  • Abstract
    Dielectric films of anodically formed HfO2based on Hf films of different degrees of orientation as well as reactively sputtered HfO2films were studied. The anodic oxide grown on oriented Hf films and the reactively sputtered HfO2films were monoclinic and showed partial orientation with the
  • Keywords
    Atmosphere; Capacitors; Dielectric films; Dielectric thin films; Etching; Hafnium oxide; Resistors; Sputtering; Substrates; Transistors;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1971.1136425
  • Filename
    1136425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967224