High-reflectivity Bragg mirrors for optoelectronic applications

Author

Murtaza, S.S. ; Anselm, K.A. ; Srinivasan, A. ; Streetman, B.G. ; Campbell, J.C. ; Bean, J.C. ; Peticolas, L.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

31

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1819

Lastpage

1825

Abstract

We report novel Bragg-reflecting structures that represent a departure from the conventional quarter-wavelength stacks used currently in the optoelectronics industry. These structures can be used to design high-reflectivity mirrors in strained material systems and mirrors that will provide high reflectivities in more than one wavelength band. Such mirrors can be used to design resonant-cavities for optical absorption as well as emission. Resonant-cavity photodetectors were demonstrated

Keywords

infrared detectors; mirrors; optical films; optical resonators; photodetectors; Bragg-reflecting structures; GeSi-Si; design; emission; high-reflectivity Bragg mirrors; optical absorption; optoelectronic applications; resonant-cavities; resonant-cavity photodetectors; strained material systems; Coatings; High speed optical techniques; Mirrors; Optical filters; Optical materials; Optical refraction; Optical variables control; Reflectivity; Refractive index; Resonance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.466057

Filename

466057