Considerations and simulations of subfrequency excitation of series integrated resonant tunneling diodes oscillator

Author

Sun, Runhua ; Boric-Lubecke, Olga ; Pan, Dee-Son ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

43

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

2478

Lastpage

2485

Abstract

A subfrequency pulse initiation of an oscillator of two series-integrated RTD´s is considered and simulated. A voltage-dependent current source is adopted to separate the input and output power to represent a circulator in simulations. Simulations show, for example, a 100 GHz integrated RTD oscillator can be excited by a 50 GHz pulse with about 1 ns decay time (a characteristic decay time of 0.2 ns) without the DC instability problem, while a voltage ramp of 1 ns rise or fall time is far too slow to initiate such an oscillator. The mechanism that RTD´s are driven by subfrequency into the negative differential resistance (NDR) from the positive differential resistance (PDR) is analyzed in detail. A preliminary analysis of the transition from 50-100 GHz oscillation is also presented

Keywords

active networks; circuit stability; equivalent circuits; millimetre wave oscillators; negative resistance devices; nonlinear network analysis; resonant tunnelling diodes; EHF; MM-wave operation; NDR; PDR; negative differential resistance; positive differential resistance; series integrated RTD oscillator; subfrequency excitation; voltage-dependent current source; Diodes; Helium; Power generation; Quantum wells; Radio frequency; Resonant tunneling devices; Solid state circuits; Sun; Threshold voltage; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.466183

Filename

466183