• DocumentCode
    968367
  • Title

    Refractive index data from GaxIn1¿xAsyP1¿y films

  • Author

    Chandra, P. ; Coldren, Larry A. ; Strege, K.E.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; refractive index; semiconductor epitaxial layers; semiconductor junction lasers; vapour phase epitaxial growth; Gaxln1-xAsyP1-y films; III-V semiconductor; refractive index; vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810005
  • Filename
    4245465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968367