DocumentCode
969326
Title
Pb - Sn Solder for Die Bonding of Silicon Chips
Author
Inoue, Hirokazu ; Kurihara, Yasutoshi ; Hachino, Hiroaki
Author_Institution
Hitachi Ltd, Japan
Volume
9
Issue
2
fYear
1986
fDate
6/1/1986 12:00:00 AM
Firstpage
190
Lastpage
194
Abstract
The thermal fatigue life of silicon devices die bonded with lead-tin (Pb-Sn) alloys of 14 different compositions, from Pb-3%Sn to Pb-95% Su was investigated. A silver-plated silicon chip and a nickelplated copper substrate were soldered together using a piece of thin foil (100µmt) solder. Soldered silicon devices were exposed to thermal cycling tests of - 55 to 150°C (1 cycle/h). The thermal fatigue life of a device was defined as the number of thermal cycles when the heat resistance of the device reached 1.5 times its original value. The maximum thermal fatigue life was observed for Pb-50%Sn and was about 9 times that for Pb5%Sn. Solder grain growth during the thermal cycling was also observed, and scanning electron microscope (SEM) measurements showed that cracks in the solder propagated selectively in the at (Pb-rich) region.
Keywords
Semiconductor device bonding; Soldering; Bonding; Copper; Fatigue; Lead; Microassembly; Scanning electron microscopy; Silicon alloys; Silicon devices; Thermal resistance; Tin;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1986.1136634
Filename
1136634
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