• DocumentCode
    969326
  • Title

    Pb - Sn Solder for Die Bonding of Silicon Chips

  • Author

    Inoue, Hirokazu ; Kurihara, Yasutoshi ; Hachino, Hiroaki

  • Author_Institution
    Hitachi Ltd, Japan
  • Volume
    9
  • Issue
    2
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    190
  • Lastpage
    194
  • Abstract
    The thermal fatigue life of silicon devices die bonded with lead-tin (Pb-Sn) alloys of 14 different compositions, from Pb-3%Sn to Pb-95% Su was investigated. A silver-plated silicon chip and a nickelplated copper substrate were soldered together using a piece of thin foil (100µmt) solder. Soldered silicon devices were exposed to thermal cycling tests of - 55 to 150°C (1 cycle/h). The thermal fatigue life of a device was defined as the number of thermal cycles when the heat resistance of the device reached 1.5 times its original value. The maximum thermal fatigue life was observed for Pb-50%Sn and was about 9 times that for Pb5%Sn. Solder grain growth during the thermal cycling was also observed, and scanning electron microscope (SEM) measurements showed that cracks in the solder propagated selectively in the at (Pb-rich) region.
  • Keywords
    Semiconductor device bonding; Soldering; Bonding; Copper; Fatigue; Lead; Microassembly; Scanning electron microscopy; Silicon alloys; Silicon devices; Thermal resistance; Tin;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1986.1136634
  • Filename
    1136634