A method of determining the lifetime and diffusion coefficient of minority carriers in a semiconductor wafer

Author

Suzuki, Eiichi ; Hayashi, Yutaka

Author_Institution

Electrotech. Lab., Ibaraki, Japan

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1150

Lastpage

1154

Abstract

A method of determining the lifetime π and diffusion coefficient D of excess minority carriers is proposed. It is shown that an approximate lifetime and diffusion coefficient are obtained graphically if the back-surface recombination velocity of the sample is large. More precise values of π and D are obtained by curve fitting with the aid of calculated correction factors. It is also shown that the proposed method can be applied to a nondestructive measurement of a minority-carrier lifetime using liquid-metal contacts (mercury probes)

Keywords

carrier lifetime; diffusion in solids; electrical conductivity measurement; elemental semiconductors; minority carriers; silicon; Hg probes; Hg-Si; back-surface recombination velocity; correction factors; curve fitting; diffusion coefficient measurement; diffusion coefficient of minority carriers; excess minority carriers; liquid-metal contacts; measurement; mercury probes; minority carrier lifetime; nondestructive measurement; semiconductor wafer; Curve fitting; Degradation; Equations; Fabrication; Lifetime estimation; Performance evaluation; Probes; Radiative recombination; Schottky barriers; Velocity measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24361

Filename

24361