• DocumentCode
    969954
  • Title

    Pressure dependence of hole mobility in In1¿xGaxAsyP1¿y and its relation to alloy scattering

  • Author

    Hayes, J.R. ; Tatham, H.L. ; Adams, A.R. ; Greene, P.D.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    230
  • Lastpage
    232
  • Abstract
    Pressure-induced changes in the hole mobility of the quaternary alloy In1¿xGaxAsyP1¿y up to 15 kbar indicate that alloy scattering plays an important part in the determination of the low field hole mobility.
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; high-pressure effects in solids; indium compounds; III-V semiconductors; In1-xGaxAsyP1-y quaternary alloy; alloy scattering; hole mobility; pressure induced changes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810163
  • Filename
    4245628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969954