• DocumentCode
    970783
  • Title

    Transport properties in GaAs-AlxGa1¿xAs heterostructures and MESFET application

  • Author

    Delescluse, P. ; Laviron, M. ; Chaplart, J. ; Delagebeaudeuf, D. ; Linh, Nuyen T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratory, Orsay, France
  • Volume
    17
  • Issue
    10
  • fYear
    1981
  • Firstpage
    342
  • Lastpage
    344
  • Abstract
    Mobilities of undoped GaAs-n-doped AlxGa1¿xAs heterostructures are shown to present a maximum as a function of the thickness of the undoped AlxGa1¿xAs spacer layer. This maximum increases as the temperature decreases. The transition temperature above which phonon scattering is dominant decreases as d increases. Heterostructure FETs working at 11 GHz give an 8 dB gain.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; carrier mobility; gallium arsenide; p-n heterojunctions; GaAs-AlxGa1-xAs heterostructures; MESFET 8 dB gain at 11 GHz; MESFET application; carrier mobility; phonon scattering; temperature dependence; transition temperature; transport properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810242
  • Filename
    4245711
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970783