• DocumentCode
    971516
  • Title

    Effect of illumination and gate bias on flat-band voltage in plasma CVD Si-N on n-Si MIS structure

  • Author

    Jeong, M.U. ; Shirafuji, J. ; Inuishi, Y. ; Yakushiji, Hiroshi ; Harada, Kanako ; Oka, Hikaru

  • Author_Institution
    Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
  • Volume
    17
  • Issue
    13
  • fYear
    1981
  • Firstpage
    444
  • Lastpage
    446
  • Abstract
    Remarkable effects of light illumination and/or negative gate bias on the capacitance/voltage characteristics of plasma CVD Si-N on n-Si structure are described. A qualitative model which can explain consistently the experimental results is briefly discussed.
  • Keywords
    CVD coatings; electronic conduction in insulating thin films; metal-insulator-semiconductor structures; photovoltaic effects; silicon compounds; capacitance voltage characteristics; electronic conduction in insulating films; flat band voltage; light illumination; model; negative gate bias;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810311
  • Filename
    4245783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971516