DocumentCode
973257
Title
Electron concentration and alloy composition dependence of Hall factor in GaxIn1¿xAsyP1¿y
Author
Takeda, Y. ; Littlejohn, M.A. ; Hutchby, J.A. ; Trew, R.J.
Author_Institution
North Carolina State University, Electrical Engineering Department, Raleigh, USA
Volume
17
Issue
19
fYear
1981
Firstpage
686
Lastpage
688
Abstract
The Hall factor is calculated by the iterative method over whole composition range of GaxIn1¿xAsyP1¿y lattice-matched to InP. The electron concentrations used are 1×1016 cm¿3 and 1×1017 cm¿3, with carrier compensation ratios (ND+NA/n 1, 2, and 5, which are commonly observed in grown GaInAsP alloys. The Hall factor decreases with increasing alloy content y for relatively low electron concentrations, but this is not the case in compensated alloys because of varying predominance of scattering mechanisms with composition and ionised impurity concentration.
Keywords
Hall effect; III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; GaxIn1-xAsyP1-y; Hall factor; II-V semiconductors; alloy composition; electron concentration; ionised impurity concentration; iterative method; scattering mechanisms;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810480
Filename
4245958
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