DocumentCode
973831
Title
GaAs digital integrated circuits for very high-speed frequency division
Author
Gloanec, M. ; Jarry, J. ; Nuzillat, G.
Author_Institution
Thomson-CSF, Central Research Laboratory, Orsay, France
Volume
17
Issue
20
fYear
1981
Firstpage
763
Lastpage
765
Abstract
Dual- and single-clocked frequency dividers, consisting of normally-on GaAs MESFET integrated circuits, with maximum toggle frequency of 5.7 GHz, were fabricated. The gate length was 0.8 ¿m and an E-beam direct writing processing technology was used. Some improvements, such as reduction of the gate length and adoption of a double pinchoff voltage technology, would make possible the implementation of a counter family with a maximum operating frequency in the range 5¿7 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; 5 to 7 GHz; E-beam direct writing processing technology; GaAs MESFET integrated circuits; GaAs digital integrated circuits; counter family; double pinchoff voltage technology; dual clocked frequency dividers; gate length; maximum toggle frequency; single-clocked frequency dividers; very high-speed frequency division;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810536
Filename
4246015
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