DocumentCode
974145
Title
New laser structure on semi-insulating substrate, grown by MOCVD, for high speed operation
Author
Blondeau, R. ; Rondi, D. ; Krakowski, M. ; Glastre, Genevieve ; Vilain, G.
Author_Institution
Thompson CSF, Orsay, France
Volume
26
Issue
7
fYear
1990
fDate
3/29/1990 12:00:00 AM
Firstpage
458
Lastpage
459
Abstract
High speed 1.3 and 1.5 mu m GaInAsP/InP BH lasers on SI InP substrate have been fabricated with very good performances. The 1.3 mu m lasers have threshold currents of about 10 mA and differential external efficiencies higher than 0.2 W/A. Small signal 3 dB modulation bandwidths as high as 15 GHz have been obtained with output optical power of about 15 mW.
Keywords
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 1.5 micron; 10 mA; 15 GHz; 15 mW; BH lasers; GaInAsP-InP lasers; InP; MOCVD; SI InP substrate; differential external efficiencies; high speed operation; laser structure; modulation bandwidths; output optical power; performances; semi-insulating substrate; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900297
Filename
50228
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