• DocumentCode
    974211
  • Title

    Differences of plasma formation and extraction in P+NN+ And N+PP+ silicon TRAPATT structures

  • Author

    Vaitiekunas, F. ; Vyshniauskas, J.

  • Author_Institution
    V. Kapsukas State University, Physics Department, Vilnius, USSR
  • Volume
    17
  • Issue
    21
  • fYear
    1981
  • Firstpage
    822
  • Lastpage
    824
  • Abstract
    The results obtained from the numerical simulation of P+NN+ and N+PP+ trapatt diodes show a considerable difference between processes of dynamic minority-carrier storage in these structures. The reasons for this difference are discussed. It is shown that the given analysis will be useful in the explanation of the experimentally observed superiority of N+PP+-type diodes.
  • Keywords
    TRAPATT diodes; minority carriers; semiconductor device models; solid-state plasma; Si TRAPATT structure; TRAPATT diodes; dynamic minority-carrier storage; n+-p-p+ structure; p+-n-n+ structure; plasma extraction; plasma formation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810573
  • Filename
    4246053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974211