• DocumentCode
    976002
  • Title

    Pseudomorphic GaInP Schottky Diode and MSM detector on InP

  • Author

    Lovaliche, S. ; Corre, A. Le ; Ginudi, A. ; Henry, L. ; Vaudry, C. ; Clerot, F.

  • Author_Institution
    CNET, Lannion, France
  • Volume
    26
  • Issue
    7
  • fYear
    1990
  • fDate
    3/29/1990 12:00:00 AM
  • Firstpage
    487
  • Lastpage
    488
  • Abstract
    A high gap pseudomorphic GaInP material is used to enhance the Schottky barrier height of InP. This material leads to a Schottky diode with a barrier height of 0.8 eV, with ideality factor close to one and breakdown voltages of 200 V on undoped n type material. This diode is used to fabricate an MSM detector on InP. The device of 4*4 mu m fingers and 40 mu m2 active surface presents a risetime of 74 ps and a FWHM of 183 ps.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; gallium compounds; gold; indium compounds; semiconductor junctions; semiconductor-metal boundaries; 0.8 eV; 183 ps; 200 V; 4 micron; 74 ps; Au-GaInP-InP; FWHM; MSM detector; Schottky barrier height; barrier height; breakdown voltages; high gap pseudomorphic GaInP material; ideality factor; pseudomorphic GaInP Schottky diode; risetime;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900316
  • Filename
    50247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976002