• DocumentCode
    976318
  • Title

    Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

  • Author

    Awano, Yuji ; Tomizawa, Keiichi ; Hashizume, Nobuya ; Kawashima, Mitsumasa

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    18
  • Issue
    3
  • fYear
    1982
  • Firstpage
    133
  • Lastpage
    135
  • Abstract
    Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0.36 eV. A maximum electron velocity of 1 × 108 cm s¿1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.
  • Keywords
    III-V semiconductors; Monte Carlo methods; gallium arsenide; semiconductor diodes; GaAs submicron n+-i-n+ diode; III-V semiconductor; Monte Carlo particle simulation; ballistic; electron backscattering; electron energy; electron transport;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820089
  • Filename
    4246265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976318