• DocumentCode
    976563
  • Title

    Punch-through technique for charge collection in an extrinsic Si IRCCD

  • Author

    Brotherton, S.D. ; Gill, Akshay ; Shannon, John M. ; Parker, Gregory J.

  • Author_Institution
    Philips Research Laboratories, Redhill, UK
  • Volume
    18
  • Issue
    4
  • fYear
    1982
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    A compact punch-through charge collection structure, suitable for incorporation into an extrinsic silicon infra-red imaging CCD, is described. The operation of the structure is demonstrated using a 16-bit surface channel CCD fabricated in an n-epitaxial layer on an indium-doped substrate.
  • Keywords
    charge-coupled device circuits; infrared imaging; silicon; 16-bit surface channel CCD; IR imaging; In doped substrate; charge collection; extrinsic Si IRCCD; infra-red imaging CCD; n-epitaxial layer; punch through technique; thermal imaging;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820115
  • Filename
    4246292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976563