• DocumentCode
    976766
  • Title

    Capacitors made by anodisation of aluminium for wideband GaAs ICs

  • Author

    Binet, M.

  • Author_Institution
    Laboratoires d´´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    18
  • Issue
    5
  • fYear
    1982
  • Firstpage
    197
  • Lastpage
    198
  • Abstract
    The letter explains first how a capacitor made with anodic oxidations of aluminium can improve the bandwidth of GaAs integrated circuits. The technology of this capacitor is described with emphasis on the crossing of the edge of the capacitor by the upper metallisation. Capacitances of about 1500 pF/mm2 have been obtained with a breakdown voltage in the 5¿10 V region.
  • Keywords
    III-V semiconductors; anodisation; capacitors; gallium arsenide; integrated circuit technology; metallisation; monolithic integrated circuits; Al; III-V semiconductors; anodic oxidations; bandwidth; breakdown voltage; capacitor; metallisation; wideband GaAs ICs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820135
  • Filename
    4246313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976766