• DocumentCode
    977056
  • Title

    280 Mbit/s single-mode fibre transmission with DFB laser diode emitting at 1.53 μm

  • Author

    Yamamoto, Seiichi ; Utaka, K. ; Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y. ; Sakaguchi, So ; Seki, N.

  • Author_Institution
    KDD Research & Development Laboratories, Tokyo, Japan
  • Volume
    18
  • Issue
    5
  • fYear
    1982
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    By using a distributed feedback buried heterostructure InGaAsP/InP laser diode emitting at 1.53 μm, 21.7 km single-mode fibre transmission at 280 Mbit/s was successfully carried out without any noticeable degradation In a waveform and an error rate. This result indicates that a long-haul optical telecommunication system with a repeater span of over 70 km is possible in the fibre low-loss region of 1.5 μm to 1.6 μm wavelength.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibres; semiconductor junction lasers; 1.53 μm; 280 Mbit/s single-mode fibre transmission; III-V semiconductor; distributed feedback buried heterostructure InGaAsP/InP laser diode; optical telecommunication system; repeater span;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820162
  • Filename
    4246340