Vertical p-i-n polysilicon diode with antifuse for stackable field-programmable ROM

Author

Herner, S.B. ; Bandyopadhyay, A. ; Dunton, S.V. ; Eckert, V. ; Gu, J. ; Hsia, K.J. ; Hu, S. ; Jahn, C. ; Kidwell, D. ; Konevecki, M. ; Mahajani, M. ; Park, K. ; Petti, C. ; Radigan, S.R. ; Raghuram, U. ; Vienna, J. ; Vyvoda, M.A.

Author_Institution

Matrix Semicond., Santa Clara, CA, USA

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

271

Lastpage

273

Abstract

A field-programmable, stackable memory cell using 0.15-μm technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO₂ antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.

Keywords

CMOS memory circuits; elemental semiconductors; p-i-n diodes; parallel memories; read-only storage; semiconductor device manufacture; semiconductor storage; silicon; 0.15 micron; SiO/sub 2/; TiN-W; adhesion film; antifuse film; cell fabrication; device performance; field-programmable stackable memory cell; interconnect wires; p-i-n diode; polysilicon; read-only memories; submicron technology; vertical polycrystalline silicon diodes; voltage bias; Adhesives; P-i-n diodes; PIN photodiodes; Read only memory; Semiconductor films; Silicon; Tin; Tungsten; Voltage; Wires;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.827287

Filename

1295104