Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers

Author

Pei, Zhiyuan ; Shi, Jin-Wei ; Hsu, Y.-M. ; Yuan, F. ; Liang, C.S. ; Lu, S.C. ; Hsieh, W.Y. ; Tsai, M.-J. ; Liu, C.W.

Author_Institution

Electron. Res. & Service Organ., Hsinchu, Taiwan

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

286

Lastpage

288

Abstract

In this letter, we create a path to remove excess carriers in the base region of a SiGe phototransistor (HPT) by introducing the trap centers. The behavior of the trap centers in the SiGe heterojunction bipolar transistor (HBT) is a form of nonideal (nkT) base current. The responsivity of the device is ∼0.43 A/W with fully SiGe HBT-compatible device structure to facilitate the integration of the following amplification circuitry. The full-width at half-maximum of the pulse is ∼90 ps and the tail of the optical pulse response is largely reduced with the nkT current. By reducing the tail, bandwidth is increased from 1.5 to 3 GHz. This proposes SiGe HPT is applicable for optoelectronic technology.

Keywords

elemental semiconductors; heterojunction bipolar transistors; photoelectric devices; phototransistors; semiconductor devices; 1.5 to 3 GHz; 90 ps; HPT; SiGe; SiGe phototransistor; amplification circuitry; bandwidth enhancement; base region; compatible device structure; device integration; excess carrier removal; heterojunction bipolar transistor; nkT current; nonideal base current; optical pulse response; optoelectronic technology; responsivity; trap centers; Absorption; Bandwidth; Germanium silicon alloys; Optical pulses; Phototransistors; Pulse amplifiers; Pulse measurements; Quantum well devices; Silicon germanium; Tail;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.826975

Filename

1295109