20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications

Author

Lunardi, L.M. ; Chandrasekhar, S. ; Gnauck, A.H. ; Burrus, C.A.

Author_Institution

Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA

Volume

7

Issue

10

fYear

1995

Firstpage

1201

Lastpage

1203

Abstract

A photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has been fabricated from metal-organic molecular beam epitaxy (MOMBE) material. The fiber-pigtailed module has measured sensitivities of -20.4 dBm and -17.0 dBm for data rates of 10 Gb/s and 20 Gb/s, respectively, at a bit-error-rate of 1×10/sup -9/. High-speed operation has been achieved with modest (3 μm) device dimensions. These results are the best ever reported for an OEIC photoreceiver at these speeds.

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; photodetectors; semiconductor growth; sensitivity; 1.55 mum; 1.55-/spl mu/m communications; 20 Gbit/s; 3 mum; InP-InGaAs; InP-InGaAs heterojunction bipolar transistor; MOMBE material; OEIC photoreceiver; bit-error-rate; data rates; fiber-pigtailed module; high-speed operation; measured sensitivities; metal-organic molecular beam epitaxy material; monolithically integrated; p-i-n photodetector; p-i-n/HBT photoreceiver module; transimpedance amplifier; Bipolar transistors; Circuits; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical amplifiers; Optical noise; Optical receivers; Optoelectronic devices; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466590

Filename

466590