New unipolar switching power device figures of merit

Author

Huang, Alex Q.

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., State Univ., Blacksburg, VA, USA

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

298

Lastpage

301

Abstract

Several new unipolar switching power device figures of merit are proposed based on proper consideration of power device conduction and switching losses. These figures of merit can be used for device and material comparison. The relative advantages of different semiconductor materials are then compared. Using the new figures of merit, the predicted advantages of power devices based on wide-bandgap materials are less than those predicted by other published figures of merits.

Keywords

junction gate field effect transistors; power MESFET; power MOSFET; power semiconductor switches; semiconductor device manufacture; wide band gap semiconductors; JFET; MESFET; MOSFET; device comparison; figure-of-merit; material comparison; power device conduction; power levels; semiconductor materials; switching frequency; switching losses; switching power device; wide-bandgap semiconductor; Capacitance; Conducting materials; Dielectric materials; MESFETs; Magneto electrical resistivity imaging technique; Power semiconductor switches; Semiconductor materials; Switching converters; Switching loss; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.826533

Filename

1295113