• DocumentCode
    977334
  • Title

    Stable monolithic GaAs FET oscillator

  • Author

    Tsironis, Christos ; Kermarrec, C. ; Faguet, J. ; Harrop, Peter

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    18
  • Issue
    8
  • fYear
    1982
  • Firstpage
    345
  • Lastpage
    347
  • Abstract
    A monolithic X-band GaAs FET oscillator has been developed. Passive circuit components are lumped capacitors and inductors on semi-insulating GaAs; the chip size is 1.2 × 1.4 mm2. Stabilised with a Ba2Ti9O20 dielectric resonator, the oscillator delivers more than 30 mW output power at 10.8 GHz with a maximum chip efficiency of 20%. The frequency drift is better than 1 × 10¿6/K from ¿20°C to 80°C.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; 10.8 GHz; Ba2Ti9O20 dielectric resonator; III-V semiconductor; inductors; lumped capacitors; monolithic X-band GaAs FET oscillator; passive circuit components;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820236
  • Filename
    4246368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977334