Using direct-tunneling mechanism to suppress hysteresis effect in floating-body partially depleted SOI devices

Considering the direct-tunneling mechanism, the hysteresis effect in ultrathin gate-oxide floating-body partially depleted (PD) silicon-on-insulator (SOI) devices is investigated. For H-gate PD SOI, owing to the converse poly-gate beside the body terminal, the influence of the direct-tunneling mechanism on the floating-body potential can no longer be overlooked. Based on the measured results, for ultrathin gate-oxide H-gate PD SOI devices, the floating-body potential is dominated by the direct-tunneling mechanism and appears highly gate voltage-dependent. As compared to the amount of the accumulation tunneling charges, the variation between the generation and recombination processes that causes the hysteresis behavior can be ignored. Therefore, the hysteresis effect is suppressed.