• DocumentCode
    977491
  • Title

    Characterization of spiral inductors with patterned floating structures

  • Author

    Chang, Chiaming Alex ; Tseng, Sung-Pi ; Chuang, Jun Yi ; Jiang, Shiue-Shr ; Yeh, J. Andrew

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    52
  • Issue
    5
  • fYear
    2004
  • fDate
    5/1/2004 12:00:00 AM
  • Firstpage
    1375
  • Lastpage
    1381
  • Abstract
    The impact of two different types of floating patterns on spiral inductors was investigated. Both patterned trench isolation with a floating p/n junction and floating metal poles were implemented underneath reference spiral inductors. All three types of inductors have an identical spiral geometry. Combination of patterned trench isolation with a floating p/n junction increases maximum quality factor (Qmax) by 17% compared to the reference inductors. The floating metal poles enable adjustment of the frequency at Qmax (fmax) without hampering the Qmax. A ladder-type lump-element model was employed to analyze inductor performance after it was demonstrated to precisely capture behavior of all three inductors. Enhancement of the quality factor due to patterned trench isolation with a floating p/n junction was found to result from an increment of effective resistivity in substrates. Reduction of the frequency fmax due to the floating metal poles was caused by increasing effective coupling capacitance between the spiral inductors and substrate.
  • Keywords
    Q-factor; capacitance; inductors; ladder networks; microwave devices; p-n junctions; coupling capacitance; effective resistivity; floating metal poles; floating p/n junction; ladder-type lump-element model; patterned floating structures; patterned trench isolation; spiral geometry; spiral inductors; CMOS technology; Conductivity; Copper; Energy loss; Inductors; Q factor; Radio frequency; Silicon; Spirals; Substrates;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2004.827002
  • Filename
    1295135