Electrical design optimization of single-mode tunnel-junction-based long-wavelength VCSELs

Author

Mehta, Manish ; Feezell, Danny ; Buell, David A. ; Jackson, Andrew W. ; Coldren, Larry A. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

42

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

675

Lastpage

682

Abstract

We present principles for tunnel-junction (TJ) design optimization for use in intracavity contacted long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs). Using the WKB approximation, we find that layer thicknesses of 10 nm on the n++ side and 10 nm on the p++ side are large enough to maximize quantum tunneling probability and small enough to yield low optical free-carrier absorption loss. We also conjecture that our experimental test structures and actual devices have far lower active acceptor concentration than we expect based on an analytical model. Finally, we calculate the necessary doping levels to enable single-mode operation of LW-VCSELs and incorporate these conditions into a complete optimized model of our VCSELs. Based on optimal I-V curves, we can expect an increase in single-mode output power from 2 to 3.5 mW

Keywords

III-V semiconductors; WKB calculations; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical losses; probability; semiconductor doping; semiconductor lasers; surface emitting lasers; 10 nm; 2 to 3.5 mW; AlInAs-InP; AlInGaAs; VCSEL; WKB approximation; active acceptor concentration; doping levels; electrical design optimization; intracavity contacted lasers; long-wavelength lasers; optical free-carrier absorption loss; optimal I-V curves; quantum tunneling probability; single-mode lasers; tunnel-junction design; Absorption; Analytical models; Contacts; Design optimization; Doping; Optical losses; Surface emitting lasers; Testing; Tunneling; Vertical cavity surface emitting lasers; AlInAs; AlInGaAs; InP; current spreading; long-wavelength; tunnel diode; tunnel junction; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.876713

Filename

1643359