• DocumentCode
    978096
  • Title

    Temperature dependence of threshold current of GaAs quantum well lasers

  • Author

    Dutta, N.K.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    18
  • Issue
    11
  • fYear
    1982
  • Firstpage
    451
  • Lastpage
    453
  • Abstract
    The radiative recombination rate in a quantum well structure is calculated using a constant density of states and the k-selection rule. This calculation shows that the threshold current of a GaAs quantum well laser has low temperature sensitivity (T0 ¿ 330 K for T > 300 K).
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs quantum well lasers; constant density of states; k-selection rule; radiative recombination rate; semiconductor laser; temperature dependence; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820307
  • Filename
    4246442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978096