• DocumentCode
    978107
  • Title

    Experimental comparison of a germanium avalanche photodiode and InGaAs PINFET receiver for longer wavelength optical communication systems

  • Author

    Smith, David R. ; Hooper, R.C. ; Smyth, P.P. ; Wake, D.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    18
  • Issue
    11
  • fYear
    1982
  • Firstpage
    453
  • Lastpage
    454
  • Abstract
    The receiver sensitivity of an InGaAs PIN photodiode-GaAs MESFET hybrid optical receiver is compared experimentally with that of a germanium avalanche photodiode from 34 to 565 Mbit/s and over the temperature range 20 to 60°C.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; avalanche photodiodes; elemental semiconductors; gallium arsenide; germanium; hybrid integrated circuits; indium compounds; optical communication equipment; photodiodes; 20 to 60 degrees C; 34 to 565 Mbit/s; Ge avalanche photodiode; InGaAs PIN photodiode-GaAs MESFET hybrid receiver; InGaAs PINFET receiver; MESFET; optical communication systems; p-i-n photodiode; sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820308
  • Filename
    4246443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978107