• DocumentCode
    978145
  • Title

    Modulation speed and leakage current in 650 nm resonant-cavity light emitting diodes

  • Author

    Hild, K. ; Sale, T.E. ; Sweeney, S.J. ; Hirotani, M. ; Mizuno, Y. ; Kato, T.

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • Volume
    151
  • Issue
    2
  • fYear
    2004
  • fDate
    4/26/2004 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    The authors have investigated red-emitting (650 nm) resonant-cavity light emitting diodes for use with polymer optical fibres. The small signal modulation response is characterised by a single order roll-off. The -3 dB bandwidth is found to be determined solely by the differential carrier lifetime, τ, in the active region and hence dependent on current density, J, alone with no intrinsic size effects. The τ(J) relation allows the calculation of the active region carrier density and hence the recombination parameters (mono- and bimolecular) in the regime where the leakage is small. It is shown that the leakage is insignificant for currents below 200 A/cm2 at 20°C. Above 40°C the leakage rises rapidly with temperature, and is evident from a dramatic fall in τ and an accelerated rise in the current required to maintain constant light output.
  • Keywords
    carrier density; carrier lifetime; leakage currents; light emitting diodes; optical fibre communication; optical modulation; -3 dB bandwidth; 20 degC; 650 nm; 650 nm resonant-cavity light emitting diodes; active region carrier density; current density; differential carrier lifetime; leakage current; modulation speed; polymer optical fibres; recombination parameters; red-emitting resonant-cavity light emitting diodes; signal modulation response;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:20040289
  • Filename
    1295758