Simple model for threshold voltage of a nonuniformly doped short-channel MOS transistor

In this letter a simple geometric model for evaluating the threshold voltage of an ion-implanted short-channel MOS transistor, taking into account the form of the depletion regions around the source and drain p-n junctions, is presented. The model displays good agreement between the theoretical and experimental results and can be employed for sensitivity evaluation and optimisation of the threshold voltage.