DocumentCode
979470
Title
X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate
Author
Sarazin, Nicolas ; Jardel, O. ; Morvan, E. ; Aubry, R. ; Laurent, M. ; Magis, M. ; Tordjman, M. ; Alloui, M. ; Drisse, O. ; Di Persio, J. ; Poisson, M. A Di Forte ; Delage, S.L. ; Vellas, N. ; Gaquiere, C. ; Théron, D.
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis
Volume
43
Issue
23
fYear
2007
Abstract
AllnN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AllnN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 mum. A good extrinsic transconductance value of 400 mS/mm was also measured on these transistors. The results are believed to be the best power results published about AllnN/GaN HEMTs.
Keywords
high electron mobility transistors; silicon compounds; HEMT; SiC substrate; X-band power characterisation; extrinsic transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20072598
Filename
4384296
Link To Document