N-Channel MOSFETs With Embedded Silicon–Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

Author

Koh, Shao-Ming ; Sekar, Karuppanan ; Lee, David ; Krull, Wade ; Wang, Xincai ; Samudra, Ganesh S. ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

29

Issue

12

fYear

2008

Firstpage

1315

Lastpage

1318

Abstract

In this letter, we report the use of a novel cluster-carbon (C₇ H₇ ⁺) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration C_sub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. I_OFFI_DSAT comparison shows a 15% I_DSAT enhancement for n-FETs with embedded Si:C S/D at an I_OFF = 1 nA/mum despite a slightly higher series resistance.

Keywords

MOSFET; excimer lasers; solid phase epitaxial growth; N-channel MOSFET; cluster-carbon implant; excimer-laser-induced solid phase epitaxy; n-FET; preamorphization implant; source/drain stressors; Laser anneal; molecular carbon; silicon carbon; solid phase epitaxy (SPE); strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2005648

Filename

4667669