Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation

Author

Gnudi, Antonio ; Ventura, Davide ; Baccarani, Giorgio

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

12

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

1706

Lastpage

1713

Abstract

A spherical-harmonics expansion method is used to find an approximate numerical solution of the Boltzmann transport equation (BTE) in a 1-D semiconductor device including acoustic and optical phonon, ionized impurity, and impact ionization scattering as well as a system of nonparabolic bands fitting the experimental density of states up to 2.6 eV. The method is applied to the simulation of a 1-D BJT and to the computation of the collector current multiplication factor. A comparison with experimental data is presented

Keywords

Boltzmann equation; bipolar transistors; electronic density of states; impact ionisation; impurity scattering; semiconductor device models; 1D semiconductor device; BJT; Boltzmann transport equation; acoustic phonon scattering; approximate numerical solution; collector current multiplication factor; density of states; impact ionization; impact ionization scattering; ionized impurity scattering; nonparabolic bands; optical phonon scattering; spherical harmonics expansion; Acoustic devices; Acoustic scattering; Boltzmann equation; Computational modeling; Impact ionization; Optical devices; Optical scattering; Phonons; Semiconductor devices; Semiconductor impurities;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.248081

Filename

248081