DocumentCode
980998
Title
Lower submicron pattern definition by high-voltage electron-beam lithography
Author
Yoshimi, Masato ; Kawabuchi, K. ; Takigawa, T. ; Takahashi, Masaharu ; Kato, Yu
Author_Institution
Toshiba Corporation, Integrated Circuits Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
Volume
18
Issue
20
fYear
1982
Firstpage
880
Lastpage
882
Abstract
High-voltage electron-beam writing on polymethyl methacrylate (PMMA) at 50 kV with a dose of 50 ¿C/cm2 has been found to give an outstanding result of the simultaneous formation of isolated and arrayed quarter-micron window patterns of the same size as the electron-beam diameter of a quarter micron.
Keywords
electron beam lithography; 250 nm patterns; PMMA; arrayed quarter-micron window patterns; dose 50 microC/cm2; electron beam voltage 50 kV; high-voltage electron-beam lithography; polymethyl methyacrylate; simultaneous formation; submicron lithography; submicron pattern definition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820597
Filename
4246932
Link To Document