DocumentCode
981367
Title
Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers
Author
Brosson, P. ; Manganote, E.J.T. ; Prince, F.C.
Author_Institution
UNICAMP, Laboratorio de Pesquisa em Dispositivos, Campinas, Brazil
Volume
18
Issue
21
fYear
1982
Firstpage
932
Lastpage
933
Abstract
The waveguiding mechanism in a new GaAs/GaAlAs laser structure has been investigated by near-field and astigmatism measurements. The waist of the beam was observed in front of the mirror facet of the laser, indicating that the inverted gain profile is responsible for dielectric guiding along the junction plane.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; GaAs/GaAlAs lasers; astigmatism measurements; beam waist; built-in refractive index step; dielectric waveguiding mechanism; inverted gain profile; junction plane; near field measurement; semiconductor laser; transverse mode properties;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820635
Filename
4246977
Link To Document