DocumentCode
982632
Title
Disorder and the upper critical field of Nb3 Ge
Author
Habermeier, H.-U.
Author_Institution
IBM Thomas Watson Research Center, Yorktown Heights, USA
Volume
17
Issue
5
fYear
1981
fDate
9/1/1981 12:00:00 AM
Firstpage
1657
Lastpage
1659
Abstract
The upper critical field, Hc2 , as determined from experimental values of Tc and (dHc2 /dT)Tc , has been investigated in Nb3 Ge superconducting thin films with different degree of structural disorder. An increase of Hc2 (O) up to 36.9 T was found for samples with resistivities ranging from 40 μΩcm to 60μΩcm and a decrease of Hc2 (O) to 5.7 T for ρ=150 μΩcm. Based on the Ginsburg-Landau solution for Hc2 (O) and the change of the coherence length with the electron mean free path a model is presented which describes the change of Hc2 (O) with resistivity, qualitatively.
Keywords
Conducting films; Superconducting materials; Conductivity; Electric variables measurement; Germanium; Lattices; Magnetic field measurement; Metastasis; Niobium compounds; Phase change materials; Superconducting films; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1981.1061329
Filename
1061329
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