A fast, general three-dimensional device simulator and its application in a submicron EPROM design study

Author

Linton, Thomas D., Jr. ; Blakey, Peter A.

Author_Institution

Microelectron. & Comput. Technol. Corp., Austin, TX, USA

Volume

8

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

508

Lastpage

515

Abstract

The implementation, functionality, and use of MAGENTA, a three-dimensional semiconductor device simulator. Version 1.0 of the program solves the nonlinear Poisson equation. The program possesses the attributes of numerical efficiency, structural generality, and ease of use required to be an effective general-purpose CAD (computer-aided design) tool. The utility of MAGENTA is demonstrated in a study of EPROM (erasable programmable read-only memory) design issues. Strong three-dimensional effects which impact threshold voltage, programming characteristics, and cell capacitances are characterized. Implications of these effects for submicrometer EPROM design are discussed

Keywords

PROM; circuit CAD; digital simulation; electronic engineering computing; integrated memory circuits; semiconductor device models; 3D models; EPROM; MAGENTA; application; cell capacitances; ease of use; erasable programmable read-only memory; functionality; implementation; nonlinear Poisson equation; numerical efficiency; programming characteristics; structural generality; submicrometer EPROM design; submicron EPROM design study; three-dimensional device simulator; three-dimensional effects; three-dimensional semiconductor device simulator; threshold voltage; use; Charge carrier processes; Computational modeling; Design automation; Doping; EPROM; Numerical models; Poisson equations; Semiconductor devices; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.24879

Filename

24879