• DocumentCode
    983719
  • Title

    Electrostatic potential of impurities in quantum wells

  • Author

    Zypman, Fredy R.

  • Author_Institution
    Dept. of Phys. & Electron., Puerto Rico Univ., Humacao, Puerto Rico
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    2719
  • Lastpage
    2721
  • Abstract
    The method of images is used to calculate the electrostatic potential of an electric charge inside a double barrier structure. This potential is important for finding impurity energy levels in the quantum structure and has never been used before in exact form. The media were modeled by assigning different dielectric constants to the barriers and to the well. The highly doped contacts were assumed to have infinite dielectric constants. This method is based on calculating the Fourier transform parallel to the interfaces of the potential. This function can be obtained in closed form. The potential is then obtained by inverse Fourier transform. This integral is computationally more efficient to evaluate than the direct sum of Coulomb image terms
  • Keywords
    Fourier transform optics; electric charge; energy states; inverse problems; permittivity; semiconductor quantum wells; Coulomb image terms; Fourier transform; barriers; closed form; dielectric constants; double barrier structure; electric charge; electrostatic potential; highly doped contacts; impurities; impurity energy levels; infinite dielectric constants; inverse Fourier transform; method of images; potential interfaces; quantum structure; quantum wells; Closed-form solution; Conductivity; Dielectric constant; Electric potential; Electrons; Electrostatics; Energy states; Fourier transforms; Gallium arsenide; Impurities;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.248947
  • Filename
    248947