DocumentCode
983719
Title
Electrostatic potential of impurities in quantum wells
Author
Zypman, Fredy R.
Author_Institution
Dept. of Phys. & Electron., Puerto Rico Univ., Humacao, Puerto Rico
Volume
29
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2719
Lastpage
2721
Abstract
The method of images is used to calculate the electrostatic potential of an electric charge inside a double barrier structure. This potential is important for finding impurity energy levels in the quantum structure and has never been used before in exact form. The media were modeled by assigning different dielectric constants to the barriers and to the well. The highly doped contacts were assumed to have infinite dielectric constants. This method is based on calculating the Fourier transform parallel to the interfaces of the potential. This function can be obtained in closed form. The potential is then obtained by inverse Fourier transform. This integral is computationally more efficient to evaluate than the direct sum of Coulomb image terms
Keywords
Fourier transform optics; electric charge; energy states; inverse problems; permittivity; semiconductor quantum wells; Coulomb image terms; Fourier transform; barriers; closed form; dielectric constants; double barrier structure; electric charge; electrostatic potential; highly doped contacts; impurities; impurity energy levels; infinite dielectric constants; inverse Fourier transform; method of images; potential interfaces; quantum structure; quantum wells; Closed-form solution; Conductivity; Dielectric constant; Electric potential; Electrons; Electrostatics; Energy states; Fourier transforms; Gallium arsenide; Impurities;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.248947
Filename
248947
Link To Document