DocumentCode
984259
Title
Gate oxide breakdown on nMOSFET cutoff frequency and breakdown resistance
Author
Liu, Yi ; Sadat, Anwar ; Yuan, Jiann S.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Volume
5
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
282
Lastpage
288
Abstract
Gate oxide breakdown effect on CMOS RF devices has been examined. The breakdown spot resistance and total gate capacitance of nMOS transistors decrease with stress. The analytical equation of cutoff frequency including the gate oxide breakdown effect is derived. The impact of oxide breakdown on the performance of an LC oscillator is evaluated. The oscillation frequency of the LC oscillator increases with oxide breakdown.
Keywords
CMOS integrated circuits; MOSFET; capacitance; failure analysis; semiconductor device breakdown; breakdown resistance; cutoff frequency; gate capacitance; gate oxide breakdown; nMOSFET; CMOS technology; Capacitance; Cutoff frequency; Electric breakdown; Equations; Equivalent circuits; MOSFET circuits; Oscillators; Radio frequency; Stress; Breakdown spot resistance; LC oscillator; cutoff frequency; gate capacitance; gate oxide breakdown; nMOS transistors; oscillation frequency;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2005.847872
Filename
1458746
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