DocumentCode
984442
Title
Preserving InP surface corrugations for 1.3 ¿m GaInAsP/InP DFB lasers from thermal deformation during LPE process
Author
Kinoshita, J. ; Okuda, H. ; Uematsu, Y.
Author_Institution
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Volume
19
Issue
6
fYear
1983
Firstpage
215
Lastpage
216
Abstract
First-order InP surface corrugations for 1.3 ¿m distributed feedback (DFB) GaInAsP/InP lasers have been effectively preserved from thermal deformation that occurred during the soaking period just before LPE growth by employing a GaAs cover instead of a conventional InP cover. This technique has contributed greatly to GaInAsP/InP DFB laser reproducible fabrication.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor junction lasers; 1.3 microns wavelength; GaInAsP/InP DFB lasers; InP surface corrugations; LPE process; distributed feedback laser; semiconductor laser; thermal deformation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830148
Filename
4247520
Link To Document