Effect of ohmic contacts on buffer leakage of GaN transistors

Author

Dora, Y. ; Chakraborty, A. ; Heikman, S. ; McCarthy, L. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

529

Lastpage

531

Abstract

The effect of ohmic contacts on the buffer leakage of GaN transistors is presented. The buffer leakage for AlGaN/GaN high-electron mobility transistors and GaN MESFETs grown on the same underlying buffer was observed to be different. Controlled experiments show that the increased buffer leakage is due to the nature of the alloyed ohmic contacts and can be minimized if they are screened by the Si doping or by the two-dimensional electron gas.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; ohmic contacts; semiconductor device testing; two-dimensional electron gas; 2D electron gas; AlGaN-GaN; HEMT devices; MESFET devices; breakdown voltage; buffer leakage; high-electron mobility transistors; ohmic contacts; semi-insulating buffer; silicon doping; Doping; Gallium nitride; HEMTs; MESFETs; MODFETs; Ohmic contacts; Passivation; Substrates; Testing; Voltage; Breakdown voltage; GaN; buffer leakage; field effect transistor (FET); high-electron mobility transistor (HEMT); ohmic contact; semi-insulating buffer;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.876306

Filename

1644817