DocumentCode
985553
Title
Properties of (Fe,Co)-(Ta,W) amorphous alloy films deposited by rf sputtering
Author
Naoe, M. ; Kodaira, M. ; Hoshi, Y. ; Yamanaka, S.
Author_Institution
Tokyo Institute of Technology, Tokyo, Japan
Volume
17
Issue
6
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
3062
Lastpage
3064
Abstract
Magnetic and thermal properties of the amorphous films of (Fe,Co)100-x (Ta,W)x , (
) deposited by a rf diode sputtering have been investigated. The amorphous films were obtained for Ta or W content \´X\´ above 14 at.%. The dependence of 4πMs on X of the deposited films was examined in detail. The change of crystal structure of the films from the crystalline phase to the amorphous one at X=14 at.% with increase in X leads to a drastical decrease in 4πMs of the Fe-Ta films. The dependence of 4πMs on X of the Fe-W films is similar to that of the Fe-Ta films. On the other hand, 4πMs of the Co-Ta films decreases gradually with increase in X, even if the crystal structure changes from the crystalline phase to the amorphous one. The maximum 4πMs and the minimum coercive force Hc of the amorphous Co-Ta films are 10 kG and 0.57 Oe, respectively. The crystallization temperatures of the amorphous Co-Ta films are above 800 K, being much higher than those of 3d-transition metal-metalloid amorphous alloys. They may be useful as a soft magnetic material with high thermal Stability.
) deposited by a rf diode sputtering have been investigated. The amorphous films were obtained for Ta or W content \´X\´ above 14 at.%. The dependence of 4πMs on X of the deposited films was examined in detail. The change of crystal structure of the films from the crystalline phase to the amorphous one at X=14 at.% with increase in X leads to a drastical decrease in 4πMs of the Fe-Ta films. The dependence of 4πMs on X of the Fe-W films is similar to that of the Fe-Ta films. On the other hand, 4πMs of the Co-Ta films decreases gradually with increase in X, even if the crystal structure changes from the crystalline phase to the amorphous one. The maximum 4πMs and the minimum coercive force Hc of the amorphous Co-Ta films are 10 kG and 0.57 Oe, respectively. The crystallization temperatures of the amorphous Co-Ta films are above 800 K, being much higher than those of 3d-transition metal-metalloid amorphous alloys. They may be useful as a soft magnetic material with high thermal Stability.Keywords
Amorphous magnetic materials; Magnetic films; Sputtering; Amorphous magnetic materials; Amorphous materials; Coercive force; Crystallization; Diodes; Magnetic films; Magnetic properties; Soft magnetic materials; Sputtering; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1981.1061595
Filename
1061595
Link To Document