• DocumentCode
    985553
  • Title

    Properties of (Fe,Co)-(Ta,W) amorphous alloy films deposited by rf sputtering

  • Author

    Naoe, M. ; Kodaira, M. ; Hoshi, Y. ; Yamanaka, S.

  • Author_Institution
    Tokyo Institute of Technology, Tokyo, Japan
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • fDate
    11/1/1981 12:00:00 AM
  • Firstpage
    3062
  • Lastpage
    3064
  • Abstract
    Magnetic and thermal properties of the amorphous films of (Fe,Co)100-x(Ta,W)x, ( 4\\leq\\times\\leq30 ) deposited by a rf diode sputtering have been investigated. The amorphous films were obtained for Ta or W content \´X\´ above 14 at.%. The dependence of 4πMs on X of the deposited films was examined in detail. The change of crystal structure of the films from the crystalline phase to the amorphous one at X=14 at.% with increase in X leads to a drastical decrease in 4πMs of the Fe-Ta films. The dependence of 4πMs on X of the Fe-W films is similar to that of the Fe-Ta films. On the other hand, 4πMs of the Co-Ta films decreases gradually with increase in X, even if the crystal structure changes from the crystalline phase to the amorphous one. The maximum 4πMs and the minimum coercive force Hc of the amorphous Co-Ta films are 10 kG and 0.57 Oe, respectively. The crystallization temperatures of the amorphous Co-Ta films are above 800 K, being much higher than those of 3d-transition metal-metalloid amorphous alloys. They may be useful as a soft magnetic material with high thermal Stability.
  • Keywords
    Amorphous magnetic materials; Magnetic films; Sputtering; Amorphous magnetic materials; Amorphous materials; Coercive force; Crystallization; Diodes; Magnetic films; Magnetic properties; Soft magnetic materials; Sputtering; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1981.1061595
  • Filename
    1061595