The inversion layer of subhalf-micrometer n- and p-channel MOSFET´s in the temperature range 208-403 K

Author

Wildau, Hans-Jurgen ; Bernt, Helmut ; Friedrich, Detlef ; Seifert, Wilhelm ; Staudt-Fischbach, Peter ; Wagemann, Hans G. ; Windbracke, Wolfgang

Author_Institution

Inst. fuer Werkstoffe der Elektrotech., Tech. Univ. Berlin, Germany

Volume

40

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2318

Lastpage

2325

Abstract

Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 μm. The measurements have been performed within the temperature range 208-403 K (-65°C to +130°C). The accuracy of the mobility determination has been investigated, especially with regard to the determination of the effective channel length and the series resistance. The results indicate a significant mobility reduction for short-channel NMOS devices at temperatures below 300 K. A slight increase of the threshold-voltage is observed in the short-channel region. Both effects can be required by an inhomogeneous lateral doping profile within the channel due to standard submicron technology; this has been confirmed by two-dimensional device simulation

Keywords

X-ray lithography; carrier mobility; doping profiles; insulated gate field effect transistors; interface electron states; inversion layers; minority carriers; semiconductor device models; 0.35 mum; 208 to 403 K; I-V measurements; PMOS-transistors; X-ray lithography; effective channel length; inhomogeneous lateral doping profile; inversion layer; minority carrier mobility; mobility determination accuracy; mobility reduction; n-channel MOSFET; p-channel MOSFET; series resistance; short-channel NMOS devices; submicron technology; threshold-voltage; two-dimensional device simulation; Charge measurement; Current measurement; Electrical resistance measurement; Interface states; Length measurement; MOSFET circuits; Silicides; Surface resistance; Temperature distribution; X-ray lithography;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249481

Filename

249481