DocumentCode
986409
Title
High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In0.75Ga0.25As/In0.52Al0.48As HEMT fabricated on [411]A-oriented InP substrate
Author
Watanabe, I. ; Shinohara, K. ; Kitada, T. ; Shimomura, S. ; Yamashita, Y. ; Endoh, A. ; Mimura, T. ; Matsui, T. ; Hiyamizu, S.
Author_Institution
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
Volume
26
Issue
7
fYear
2005
fDate
7/1/2005 12:00:00 AM
Firstpage
425
Lastpage
428
Abstract
We achieved a maximum transconductance (gm) of 2.25 S/mm at 16 K for a 195-nm-gate In0.75Ga0.25As/In0.52Al0.48As pseudomorphic high-electron mobility transistor (PHEMT) fabricated on a [411]A-oriented InP substrate, which is the highest value ever reported for HEMTs. This PHEMT also showed a much enhanced cutoff frequency (fT) of 310 GHz at 16 K, compared with its room temperature value (245 GHz). The significantly enhanced gm and fT at 16 K can be attributed to the higher saturation velocity in the region "under the gate," which is caused not only by suppressing the phonon scattering, but also by suppressing the interface roughness scattering due to the "(411)A super-flat InGaAs/InAlAs interfaces" (effectively atomically flat heterointerfaces over a wafer-size area).
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; 16 K; 195 nm; 2.25 S/mm; 245 GHz; 310 GHz; In0.75Ga0.25As-In0.52Al0.48As; [411]A super-flat interfaces; [411]A-oriented substrate; cutoff frequency; high transconductance; interface roughness scattering; molecular beam epitaxy; pHEMT; phonon scattering; pseudomorphic high-electron mobility transistor; pseudomorphic transconductance; saturation velocity; Cutoff frequency; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; PHEMTs; Phonons; Scattering; Temperature; Transconductance; (411)A super-flat interfaces; (411)A-oriented InP; InGaAs/InAlAs; cutoff frequency; high-electron mobility transistor (HEMT); molecular beam epitaxy (MBE); pseudomorphic; transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.851234
Filename
1458945
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