• DocumentCode
    986482
  • Title

    1.55 ¿m multisection ridge lasers

  • Author

    Bowers, John E. ; Coldren, Larry A. ; Hemenway, B.R. ; Miller, B.I. ; Martin, R.J.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    523
  • Lastpage
    525
  • Abstract
    A new 1.55 ¿m wavelength GaInAsP laser is described: the multisection ridge laser. Pulsed thresholds were typically 40¿80 mA. CW thresholds were comparable. The lowest measured CW threshold was 38 mA at 12°C. The laser operated stably in a single longitudinal mode (spurious modes down by ¿16 dB) under fast pulse modulation with a prebias below threshold. Theoretical results based on a waveguide scattering theory are in qualitative agreement with the experimental results.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.55 micron wavelength; CW thresholds; GaInAsP laser; fast pulse modulation; multisection ridge lasers; pulsed thresholds; semiconductor laser; single longitudinal mode; waveguide scattering theory;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830356
  • Filename
    4247848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986482