30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance

Author

Ahn, Chang-Geun ; Cho, Won-Ju ; Im, Kiju ; Yang, Jong-Heon ; Baek, In-Bok ; Baek, Sungkweon ; Lee, Seongjae

Author_Institution

Future Technol. Res. Div., ETRI, Daejeon, South Korea

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

486

Lastpage

488

Abstract

A novel ultrathin body SOI MOSFET with a recessed source-drain (S/D) structure is proposed to reduce the S/D extension (SDE) resistance and the feasibility on the proposed device is checked. A recessed buried oxide under the SDE regions is completely filled with the heavily doped polysilicon, which can lead to a low SDE resistance. A recessed S/D SOI MOSFET with 30 nm gate length and 5 nm thick undoped channel, was successfully fabricated and showed the good SCE immunities; little punch-through, the drain-induced barrier lowering of 140 mV/V, and the subthreshold slope of 79 mV/dec.

Keywords

MOSFET; silicon-on-insulator; 30 nm; extension resistance; flowable oxide; low SDE resistance; recessed buried oxide; recessed source-drain SOI MOSFET; silicon-on-insulator; source-drain extension; ultrathin MOSFET; ultrathin body; Diffusion processes; Electric resistance; Etching; Fabrication; Immune system; Ion implantation; Lead compounds; MOSFET circuits; Silicon compounds; Silicon on insulator technology; Extension resistance; SOI MOSFET; flowable oxide; recessed source-drain; ultrathin body;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851183

Filename

1458964