DocumentCode
986802
Title
Electric-field-shielding layers formed by oxygen implantation into silicon
Author
Nakashima, S. ; Akiya, M. ; Kato, Kazuhiko
Author_Institution
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Volume
19
Issue
15
fYear
1983
Firstpage
568
Lastpage
570
Abstract
The electric-field-shielding effect was found in a layer consisting of a mixture of polycrystalline silicon and silicon oxide formed by oxygen ion implanatation. The layer was formed between the buried SiO2 and the upper Si layer, which improved characteristics for MOSFETs fabricated using SIMOX (separation by implanted oxygen) technology. By forming this layer, the threshold voltages for the MOSFETs were almost independent of substrate bias. Drain-to-source breakdown voltages for the p-MOSFETs and n-MOSFETs were raised to 250 V and 180 V, respectively.
Keywords
elemental semiconductors; insulated gate field effect transistors; ion implantation; semiconductor technology; silicon; MOSFETs; O ion implantation; SIMOX; SiO; buried SiO2; drain-to-source breakdown voltages; electric-field-shielding effect; polycrystalline Si; substrate bias;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830387
Filename
4247882
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