A silicon bipolar transmitter front-end for 802.11a and HIPERLAN2 wireless LANs

Author

Italia, Alessandro ; Paglia, Luca La ; Scuderi, Antonino ; Carrara, Francesco ; Ragonese, Egidio ; Palmisano, Giuseppe

Author_Institution

Dipt. di Ingegneria Elettrica Elettronica e dei Sistemi, Univ. di Catania, Italy

Volume

40

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1451

Lastpage

1459

Abstract

A 5-GHz transmitter front-end for 802.11a and HIPERLAN2 wireless local area networks was implemented in a low-cost 46-GHz-f_T silicon bipolar technology. The transmitter includes a digitally controlled linear-in-dB variable-gain up-converter and a three-stage linear power amplifier. At a 3-V supply voltage, the front-end exhibits a 23.5-dBm output 1-dB compression point, 35-dB maximum power gain, and 30-dB dynamic range. The dB-linear gain error is lower than ±0.8 dB. The transmitter is able to comply with the stringent error vector magnitude requirement of the standard up to a 19-dBm output power level.

Keywords

IEEE standards; OFDM modulation; bipolar integrated circuits; integrated circuit design; microwave devices; radio transmitters; wireless LAN; 3 V; 35 dB; 46 GHz; 5 GHz; 802.11a; HIPERLAN2; OFDM; digital control; orthogonal frequency division multiplexing; power amplifier; radio transmitter; silicon bipolar technology; transmitter front-end; wireless LAN; Fabrication; Local area networks; OFDM modulation; Power amplifiers; Power generation; Radio transmitters; Silicon; Transceivers; Vectors; Wireless LAN; 802.11a; HIPERLAN2; orthogonal frequency division multiplexing (OFDM); radio transmitter; silicon bipolar technology; wireless local area network (WLAN);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2005.847327

Filename

1458988