Transport properties of amorphous Gd-Co films

The electrical resistivity and the galvanomagnetic effect in Gd-Co sputtered films were studied as a function of temperature between 1.5 and 390 K. The logarithmic temperature dependence of electrical resistivity was dominant in the region from 1.5 to 35 K and disappeared after crystallization. The quadratic temperature dependence of electrical resistivity was observed from 50 to 390 K together with the resistivity minimum. The temperature dependence of transverse magnetoresistivity was measured to investigate the effect of magnetic domain walls to the temperature dependence of electrical resistivity. The temperature dependence of transverse magnetoresistivity was about one hundredth as large as that of electrical resistivity.